CEM4308 Datasheet, Transistor, CET

CEM4308 Features

  • Transistor 40V, 5.8A, RDS(ON) = 38mΩ RDS(ON) = 50mΩ @VGS = 10V. @VGS = 4.5V. 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free produc

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Part number:

CEM4308

Manufacturer:

CET

File Size:

245.46kb

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📄 Datasheet

Description:

Dual n-channel enhancement mode field effect transistor.

Datasheet Preview: CEM4308 📥 Download PDF (245.46kb)
Page 2 of CEM4308 Page 3 of CEM4308

TAGS

CEM4308
Dual
N-Channel
Enhancement
Mode
Field
Effect
Transistor
CET

📁 Related Datasheet

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CEM4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -6A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. Super high den.

CEM4307 - Dual P-Channel MOSFET (CET)
CEM4307 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -5A, RDS(ON) = 44mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -.

CEM4309 - Dual-Channel MOSFET (CET)
CEM4309 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 40V, 5.8A, RDS(ON) = 38mΩ @VGS = 10V. RDS(ON) = 50mΩ @V.

CEM4311 - P-Channel Enhancement Mode Field Effect Transistor (CET)
CEM4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -9.3A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high d.

CEM4042 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 18A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.5mΩ @VGS = 4.5V. .

CEM4042 - N-Channel MOSFET (VBsemi)
CEM4042-VB CEM4042-VB Datasheet N-Channel 40-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0038 at VGS = 10 V 40 0.0057 at.

CEM4052 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4052 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 16A, RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. Super high dens.

CEM4063 - p- (CET)
CEM4063 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 14mΩ @VGS = -4.5V.

CEM4201 - p- (CET)
CEM4201 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -7.5A, RDS(ON) = 28mΩ @VGS = -10V. RDS(ON) = 38mΩ @VGS = -4.5V. Super high .

CEM4204 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4204 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 7.3A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. Super high dens.

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