CEU3089 Datasheet, Mosfet, CET

CEU3089 Features

  • Mosfet 30V , 25A , RDS(ON) = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ @VGS = 5V. -30V , -16A , RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON

PDF File Details

Part number:

CEU3089

Manufacturer:

CET

File Size:

578.19kb

Download:

📄 Datasheet

Description:

Dual-channel mosfet.

Datasheet Preview: CEU3089 📥 Download PDF (578.19kb)
Page 2 of CEU3089 Page 3 of CEU3089

TAGS

CEU3089
Dual-Channel
MOSFET
CET

📁 Related Datasheet

CEU3080 - N-Channel MOSFET (CET)
CED3080/CEU3080 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 57A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = .

CEU301J - Disc Ceramic Capacitors (Mallory)
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors { { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.

CEU3055L - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEU3055L3 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEU3055L5 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEU3060 - N-Channel MOSFET (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A , RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 9.5mΩ @VGS = 4.5V. Super high dense cell .

CEU3070 - N-Channel MOSFET (CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell .

CEU3099 - Dual Enhancement Mode Field Effect Transistor (CET)
CEU3099 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V , 26A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. .

CEU30N08 - N-Channel MOSFET (CET)
CED30N08/CEU30N08 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 80V, 30A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS.

CEU30P10 - P-Channel MOSFET (CET)
CED30P10/CEU30P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. S.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts