CEU301J Datasheet, Capacitors, Mallory

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Part number:

CEU301J

Manufacturer:

Mallory

File Size:

52.02kb

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📄 Datasheet

Description:

Disc ceramic capacitors.

TAGS

CEU301J

Mallory

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CEU3060 - N-Channel MOSFET (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A , RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 9.5mΩ @VGS = 4.5V. Super high dense cell .

CEU3070 - N-Channel MOSFET (CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell .

CEU3080 - N-Channel MOSFET (CET)
CED3080/CEU3080 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 57A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = .

CEU3089 - Dual-Channel MOSFET (CET)
CEU3089 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V , 25A , RDS(ON) = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ .

CEU3099 - Dual Enhancement Mode Field Effect Transistor (CET)
CEU3099 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V , 26A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. .

CEU30N08 - N-Channel MOSFET (CET)
CED30N08/CEU30N08 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 80V, 30A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS.

CEU30P10 - P-Channel MOSFET (CET)
CED30P10/CEU30P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. S.