CEU1012 - N-Channel MOSFET
(CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(.
CEU1012L - N-Channel MOSFET
(CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(O.
CEU100D - Disc Ceramic Capacitors
(Mallory)
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors
{ { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.
CEU10P10 - P-Channel MOSFET
(Chino-Excel Technology)
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-100V, -8A, RDS(ON) = 350mΩ @VGS = -10V.
CED10P10/CEU10P10
Super high dense cell design .
CEU110P03 - P-Channel MOSFET
(CET)
CED110P03/CEU110P03
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -92A, RDS(ON) =6.0mΩ @VGS = -10V. RDS(ON) =9.0mΩ .
CEU1185 - N-Channel MOSFET
(CET)
CED1185/CEU1185
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
800V, 3.4A, RDS(ON) = 2.9 Ω @VGS = 10V. Super high dense ce.