✔ CEU1012 Features
120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. T
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CEU1012
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CET
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📄 Datasheet
Description:
N-channel mosfet.
CEU1012L - N-Channel MOSFET
(CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(O.
CEU101J - Disc Ceramic Capacitors
(Mallory)
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors
{ { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.
CEU100D - Disc Ceramic Capacitors
(Mallory)
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors
{ { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.
CEU10P10 - P-Channel MOSFET
(Chino-Excel Technology)
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-100V, -8A, RDS(ON) = 350mΩ @VGS = -10V.
CED10P10/CEU10P10
Super high dense cell design .
CEU110P03 - P-Channel MOSFET
(CET)
CED110P03/CEU110P03
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -92A, RDS(ON) =6.0mΩ @VGS = -10V. RDS(ON) =9.0mΩ .
CEU1185 - N-Channel MOSFET
(CET)
CED1185/CEU1185
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
800V, 3.4A, RDS(ON) = 2.9 Ω @VGS = 10V. Super high dense ce.
CEU11P20 - P-Channel MOSFET
(CET)
CED11P20/CEU11P20
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-200V, -10.5A, RDS(ON) = 0.36Ω @VGS = -10V. Super high de.
CEU121J - Disc Ceramic Capacitors
(Mallory)
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors
{ { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.
CEU12N10 - N-Channel MOSFET
(CET)
CED12N10/CEU12N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 11A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for .
CEU12N10L - N-Channel MOSFET
(Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 11A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell de.