100V, 11A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead
CEU12N10, CET
CED12N10/CEU12N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 11A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for .
CEU121J, Mallory
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors
{ { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.
CEU12P10, CET
CED12P10/CEU12P10
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-100V, -9A, RDS(ON) = 315mΩ @VGS = -10V.
Super high dense cell design f.
CEU12P15, CET
CED12P15/CEU12P15
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-150V, -12A, RDS(ON) = 0.24Ω @VGS = -10V. Super high dens.
CEU100D, Mallory
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors
{ { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.
CEU1012, CET
N-Channel Enhancement Mode Field Effect Transistor FEATURES
120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(.
CEU1012L, CET
N-Channel Enhancement Mode Field Effect Transistor FEATURES
120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(O.
CEU101J, Mallory
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors
{ { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.
