-200V, -10.5A, RDS(ON) = 0.36Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS co
CEU1185, CET
CED1185/CEU1185
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
800V, 3.4A, RDS(ON) = 2.9 Ω @VGS = 10V. Super high dense ce.
CEU100D, Mallory
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors
{ { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.
CEU1012, CET
N-Channel Enhancement Mode Field Effect Transistor FEATURES
120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(.
CEU1012L, CET
N-Channel Enhancement Mode Field Effect Transistor FEATURES
120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(O.
CEU101J, Mallory
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors
{ { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.
CEU121J, Mallory
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors
{ { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.
