Datasheet4U Logo Datasheet4U.com

CEU740A Datasheet, Mosfet, CET

✔ CEU740A Features

PDF File Details

Manufacture Logo for CET
CET manufacturer logo

Part number:

CEU740A

Manufacturer:

CET

File Size:

413.86kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: CEU740A 📥 Download PDF (413.86kb)
Page 2 of CEU740A Page 3 of CEU740A

📁 Related Datasheet

CEU703AL - N-Channel MOSFET (CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A, RDS(ON) = 19mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. Super high dense cell des.
CEU71A3 - N-Channel MOSFET (CET)
CED71A3/CEU71A3 Dec. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 65A , RDS(ON)=10m Ω @VGS=10V. RDS(ON)=14m Ω @.
CEU72A3 - N-Channel MOSFET (CET)
CED72A3/CEU72A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 70A, RDS(ON) = 8.5mΩ @VGS = 10V. RDS(ON) = 11mΩ @VGS = 4.5V. Super h.
CEU730G - N-Channel MOSFET (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 400V, 5A, RDS(ON) = 1Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON)..
CEU73A3 - N-Channel MOSFET (CET)
CED73A3/CEU73A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 65A, RDS(ON) = 7.8mΩ(typ) @VGS = 10V. RDS(ON) = 10mΩ(typ) @VGS = 4.5V.
CEU73A3G - N-Channel MOSFET (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 57A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. Super high dense cell desi.
CEU75A3 - N-Channel MOSFET (CET)
CED75A3/CEU75A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 60A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high.
CEU78A3 - N-Channel MOSFET (CET)
CED78A3/CEU78A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 70A, RDS(ON) = 7.5mΩ @VGS = 10V. RDS(ON) = 11mΩ @VGS = 4.5V. Super h.
CEU01N6 - N-Channel MOSFET (CET)
CED01N6/CEU01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for ex.
CEU01N65 - N-Channel MOSFET (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS.

TAGS

CEU740A N-Channel MOSFET CET