2SA1585 Datasheet - CHINA BASE

2SA1585 PNP Silicon Epitaxial Planar Transistor

2SA1585 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into two groups, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 1) Single pulse Pw = 10 ms Characteristics at Ta = 25 OC Parameter DC .

2SA1585-CHINABASE.pdf