D20N06E Datasheet - CHONGQING PINGYANG ELECTRONICS

D20N06E, N-CHANNEL Power MOSFET

D20N06E .
The D20N06E is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of.

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Datasheet Details

Part number:

D20N06E

Manufacturer:

CHONGQING PINGYANG ELECTRONICS

File Size:

461.93 KB

Description:

N-CHANNEL Power MOSFET

Applications

* The D20N06E meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Puls

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D20N06E N-CHANNEL Power MOSFET CHONGQING PINGYANG ELECTRONICS

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