D20N06E N-CHANNEL Power MOSFET

CHONGQING PINGYANG ELECTRONICS

Description

D20N06E .
The D20N06E is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of.

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Datasheet Specifications

Part number: D20N06E
Manufacturer: CHONGQING PINGYANG ELECTRONICS
File Size: 461.93 KB
Datasheet: D20N06E-CHONGQINGPINGYANGELECTRONICS.pdf
Description: N-CHANNEL Power MOSFET

Applications

* The D20N06E meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Puls

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📁 Related Datasheet

D20N20 D20NF06 D20NF06L D20 D200 D2001UK

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D20N06E N-CHANNEL Power MOSFET CHONGQING PINGYANG ELECTRONICS

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