AG3011-77C Switch Datasheet - 1969 In Stock - COMUS

AG302 - InGaP HBT Gain Block (WJ Communications)
AG302 InGaP HBT Gain Block The Communications Edge TM Preliminary Product Information Product Features Product Description Functional Diagram • D.

AG302-63 - InGaP HBT Gain Block (TriQuint Semiconductor)
AG302-63 InGaP HBT Gain Block Product Features Product Description Functional Diagram • DC – 6000 MHz • 15.5 dB Gain @ 900 MHz • +13.5 dBm P1dB @ .

AG302-63 - InGaP HBT Gain Block (WJ Communication)
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AG302-86 - InGaP HBT Gain Block (TriQuint Semiconductor)
AG302-86 InGaP HBT Gain Block Product Features • DC – 6000 MHz • 15.5 dB Gain @ 900 MHz • +13.5 dBm P1dB @ 900 MHz • +26 dBm OIP3@ 900 MHz • Single V.

AG303 - InGaP HBT Gain Block (WJ Communications)
AG303 InGaP HBT Gain Block The Communications Edge TM Preliminary Product Information Product Features Product Description Functional Diagram • D.

AG303-63 - InGaP HBT Gain Block (TriQuint Semiconductor)
AG303-63 InGaP HBT Gain Block Product Features • DC – 6000 MHz • 20.5 dB Gain @ 900 MHz • +14 dBm P1dB @ 900 MHz • +26 dBm OIP3 @ 900 MHz • Single Vo.

AG303-63 - InGaP HBT Gain Block (WJ Communication)
.. AG303-63 InGaP HBT Gain Block The Communications Edge TM Product Information Product Features • • • • • • DC – 6000 MHz +14 dBm.

AG303-86 - InGaP HBT Gain Block (TriQuint Semiconductor)
AG303-86 InGaP HBT Gain Block Product Features • DC – 6000 MHz • 20.5 dB Gain @ 900 MHz • +14 dBm P1dB @ 900 MHz • +26 dBm OIP3 @ 900 MHz • Single Vo.

AG3A - Silicon Rectifier Cells with polysiloxan passivation (Diotec Semiconductor)
AG 3A … AG3M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr.

AG3B - Silicon Rectifier Cells with polysiloxan passivation (Diotec Semiconductor)
AG 3A … AG3M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr.

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