CS01N100A4R Datasheet - CR Micro

CS01N100A4R Silicon N-Channel Power MOSFET

CS01N100 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit .

CS01N100A4R Features

* Fast Switching

* Low ON Resistance(Rdson≤110Ω)

* Low Gate Charge (Typical Data:8nC)

* Low Reverse transfer capacitances(Typical:2.67pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise

CS01N100A4R-CRMicro.pdf