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CS01N60ASRD-G

Silicon N-Channel Power MOSFET

CS01N60ASRD-G Features

* l Fast Switching l Low ON Resistance(Rdson≤500Ω) l Low Gate Charge (Typical Data:3.1nC) l Low Reverse transfer capacitances(Typical:1.3pF) l Halogen Free Applications： TV power. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS dv/dt a2 PD VESD(G-S) TJ，Tstg Drai

CS01N60ASRD-G General Description

VDSS 600 V CS01N60 ASRD-G, the silicon N-channel Enhanced ID 0.04 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TA=25℃) 0.5 W which reduce the conduction loss, improve switching RDS(ON)Typ 160 Ω performance and enhance the avalanche energy. The transistor can be u.

CS01N60ASRD-G Datasheet (455.23 KB)

Preview of CS01N60ASRD-G PDF

Datasheet Details

Part number:

CS01N60ASRD-G

Manufacturer:

CR Micro

File Size:

455.23 KB

Description:

Silicon n-channel power mosfet.

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CS01N60ASRD-G Silicon N-Channel Power MOSFET CR Micro

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