Datasheet4U Logo Datasheet4U.com

CS17N10A4

Silicon N-Channel Power MOSFET

CS17N10A4 Features

* l Fast Switching l Low ON Resistance(Rdson≤67 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 100 V 17 A 56.8 W 53 mΩ Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VD

CS17N10A4 General Description

CS17N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. T.

CS17N10A4 Datasheet (513.02 KB)

Preview of CS17N10A4 PDF

Datasheet Details

Part number:

CS17N10A4

Manufacturer:

CR Micro

File Size:

513.02 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS17N10A3 Silicon N-Channel Power MOSFET (CR Micro)

CS17N10A4-G Silicon N-Channel Power MOSFET (CR Micro)

CS17-F2GA103MYNS Disk Ceramic Capacitors (TDK)

CS1750L Current Sensors (Coilcraft)

CS17E2GAxxxKYAS Ceramic Capacitors (TDK)

CS17FZ2GAxxxKYAS Ceramic Capacitors (TDK)

CS10-12.000MABJTR Surface Mount Crystals (Citizen)

CS10-12.288MABJTR Surface Mount Crystals (Citizen)

CS10-12.500MABJTR Surface Mount Crystals (Citizen)

CS10-13.560MABJTR Surface Mount Crystals (Citizen)

TAGS

CS17N10A4 Silicon N-Channel Power MOSFET CR Micro

Image Gallery

CS17N10A4 Datasheet Preview Page 2 CS17N10A4 Datasheet Preview Page 3

CS17N10A4 Distributor