CS17N10A3 Datasheet - CR Micro

CS17N10A3 Silicon N-Channel Power MOSFET

CS17N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. T.

CS17N10A3 Features

* l Fast Switching l Low ON Resistance(Rdson≤67 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 100 V 17 A 56.8 W 53 mΩ Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VD

CS17N10A3-CRMicro.pdf