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Silicon N-Channel Power MOSFET
○R
CS28N50 ANR
General Description：
CS28N50 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤195mΩ)
Low Gate Charge (Typical Data:83nC)
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
500
V
28
A
312.
CS28N50ANR Datasheet
