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CS28N50ANR Silicon N-Channel Power MOSFET

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Description

Silicon N-Channel Power MOSFET ○R CS28N50 ANR General .
CS28N50 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve sw.

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Datasheet Specifications

Part number
CS28N50ANR
Manufacturer
CR Micro
File Size
664.09 KB
Datasheet
CS28N50ANR-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤195mΩ)
* Low Gate Charge (Typical Data:83nC)
* Low Reverse transfer capacitances

Applications

* Power switch circuit of electron ballast and adaptor. 500 V 28 A 312.5 W 150 mΩ Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS Drain-to-Source Voltage ID IDMa1 VGS EAS a2 dv/dt a3 Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current G

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