CS50N20FA9R Datasheet - CR Micro

CS50N20FA9R Silicon N-Channel Power MOSFET

VDSS 200 CS50N20F A9R, the silicon N-channel Enhanced ID 50 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 45 which reduce the conduction loss, improve switching RDS(ON)Typ 42 performance and enhance the avalanche energy. The transistor can be used in various pow.

CS50N20FA9R Features

* l Fast Switching l Low ON Resistance(Rdson≤51mΩ) l Low Gate Charge (Typical Data: 49.4nC) l Low Reverse transfer capacitances(Typical:34pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol P

CS50N20FA9R-CRMicro.pdf