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CS50N20FA9R

Silicon N-Channel Power MOSFET

CS50N20FA9R Features

* l Fast Switching l Low ON Resistance(Rdson≤51mΩ) l Low Gate Charge (Typical Data: 49.4nC) l Low Reverse transfer capacitances(Typical:34pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol P

CS50N20FA9R General Description

VDSS 200 CS50N20F A9R, the silicon N-channel Enhanced ID 50 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 45 which reduce the conduction loss, improve switching RDS(ON)Typ 42 performance and enhance the avalanche energy. The transistor can be used in various pow.

CS50N20FA9R Datasheet (955.34 KB)

Preview of CS50N20FA9R PDF

Datasheet Details

Part number:

CS50N20FA9R

Manufacturer:

CR Micro

File Size:

955.34 KB

Description:

Silicon n-channel power mosfet.

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CS50N20FA9R Silicon N-Channel Power MOSFET CR Micro

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