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HPB600R380PC-G

Silicon N-Channel Power MOSFET

HPB600R380PC-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 650 V 11 A 85 W 0.35 Ω 1.4 uJ Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS

HPB600R380PC-G General Description

HPB600R380PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher.

HPB600R380PC-G Datasheet (456.24 KB)

Preview of HPB600R380PC-G PDF

Datasheet Details

Part number:

HPB600R380PC-G

Manufacturer:

CR Micro

File Size:

456.24 KB

Description:

Silicon n-channel power mosfet.

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TAGS

HPB600R380PC-G Silicon N-Channel Power MOSFET CR Micro

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