C470UT190 - LED
P-N Junction Area (μm) Chip Top Area (μm) Chip Bottom Area (μm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Bonding Area Note 5 Diameter (μm) Au Bond Pad Thickness (μm) Backside Contact Metal Area (μm) CxxxUT190-Sxxxx-31 Dimension Tolerance 160 x 160 ± 25 190 x 190 ± 25 150 x 150 ± 25 50.
Cree® UltraThin® UT190™ Gen 3 LEDs CxxxUT190-Sxxxx-31 Data Sheet (50 µm chip thickness) Cree’s UT190 LEDs combine highly efficient InGaN materials with Cree’s proprietary G SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small and thin with low forward voltage. Cree’s UT™ series chips are 100% tested for conformity to optical and electrical specifications, as well as the ability to withstand a 2000 V ESD pulse. Applicati.
C470UT190 Features
* Wavelengths for Blue, Green and White-conversion
* 50 mm Chip Thickness
* RF Performance:
* 450 nm
* 12+ mW
* 460 nm
* 10+ mW
* 470 nm
* 10+ mW
* 527 nm
* 4+ mW
* Low Forward Voltage
* 2.9
