C470UT170 - LED
P-N Junction Area (μm) Chip Top Area (μm) Chip Thickness (μm) Chip Bottom Area (μm) Au Bond Pad Diameter (μm) Bonding Area Diameter (μm) Note 5 Au Bond Pad Thickness (μm) Backside Contact Metal Area (μm) CxxxUT170-Sxxxx-31 Dimension Tolerance 140 x 140 ± 25 170 x 170 ± 25 50 ± 10 130 x 130.
Cree® UltraThin® Gen 3 LEDs Data Sheet CxxxUT170-Sxxxx-31 Cree’s UltraThin® LEDs combine highly efficient InGaN materials with Cree’s proprietary G SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications, as well as the ability to withstand 2000 V ESD. Applications include consumer products, mo.
C470UT170 Features
* Small Chip
* 170 x 170 x 50 μm
* Single Wire Bond Structure
* UT LED Performance
* 450 nm
* 12+ mW
* 460 nm
* 10+ mW
* 470 nm
* 10+ mW
* 527 nm
* 4+ mW
* Low Forward Voltage
* 2.9 V Ty
