CT3331-R3 Datasheet - CT Micro

CT3331-R3 P-Channel MOSFET

The CT3331-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3.

CT3331-R3 Features

* Drain-Source Breakdown Voltage VDSS - 200 V

* Drain-Source On-Resistance RDS(ON) 2.3Ω, at VGS= - 10V, IDS= - 0.2A RDS(ON) 2.4Ω, at VGS= - 4.5V, IDS= - 0.2A ℃,

* Continuous Drain Current at TA=25 ID = - 0.4A

* Advanced high cell density Trench Technology

* RoH

CT3331-R3-CTMicro.pdf