CT3331-R3 P-Channel MOSFET

CT Micro

Description

CT3331-R3 P-Channel Enhancement MOSFET .
The CT3331-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous b.

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Datasheet Specifications

Part number: CT3331-R3
Manufacturer: CT Micro
File Size: 2.50 MB
Datasheet: CT3331-R3-CTMicro.pdf
Description: P-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS - 200 V
* Drain-Source On-Resistance RDS(ON) 2.3Ω, at VGS= - 10V, IDS= - 0.2A RDS(ON) 2.4Ω, at VGS= - 4.5V, IDS= - 0.2A ℃,
* Continuous Drain Current at TA=25 ID = - 0.4A
* Advanced high cell density Trench Technology
* RoH

Applications

* Switches
* Power supply circuits
* Motor controls

CT3331-R3 Distributors

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CT3331-R3 P-Channel MOSFET CT Micro

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