CTD6006-T52 N-Channel MOSFET

CT Micro

Description

CTD6006-T52 N-Channel Enhancement MOSFET .
The CTD6006-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: CTD6006-T52
Manufacturer: CT Micro
File Size: 2.01 MB
Datasheet: CTD6006-T52-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 60V
* Drain-Source On-Resistance RDS(ON) 20m, at VGS= 10V, ID= 20A RDS(ON) 24m, at VGS= 4.5V, ID= 10A
* Continuous Drain Current at TC=25℃, ID =35A
* Advanced high cell density Trench Technology

Applications

* Super Low Gate Charge
* 100% EAS Guaranteed
* Green Device Available
* Excellent CdV/dt effect decline Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jan, 2018 CTD6006-T52 N-Channel Enhancement MOSFET Absolu

CTD6006-T52 Distributors

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CTD6006-T52 N-Channel MOSFET CT Micro

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