CTH2503NS-T52 N-Channel MOSFET

CT Micro

Description

CTH2503NS-T52 N-Channel Enhancement MOSFET .
The CTH2503NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

📥 Download Datasheet

CTH2503NS-T52 Datasheet Preview — Preview of CTH2503NS-T52 PDF

Datasheet Specifications

Part number: CTH2503NS-T52
Manufacturer: CT Micro
File Size: 1.02 MB
Datasheet: CTH2503NS-T52-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 30V
* Drain-Source On-Resistance RDS(ON) 21m, at VGS= 10V, ID= 10A RDS(ON) 32m, at VGS= 4.5V, ID= 7A
* Continuous Drain Current at TC=25℃, ID =25A
* Advanced high cell density Trench Technology

Applications

* Power Management
* Portable Equipment
* DC/DC Converter
* Load Switch Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTH2503NS-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symb

CTH2503NS-T52 Distributors

📁 Related Datasheet

CTHF2422 CTHF2430 CTHF2826 CTHF2836 CTHF2836F CTHFW2918F

📌 All Tags

CTH2503NS-T52 N-Channel MOSFET CT Micro

CT Micro CTH2503NS-T52-like datasheet