Datasheet4U Logo Datasheet4U.com

CTHF2826

Common Chokes

CTHF2826 General Description

Common mode choke coils. Applications: For AC power supply/compact, separable bobbin. Rated Voltage: 250Vac Operating Temperature: -20°C to +105°C (including self temperature rise). Temperature Rise: 45°C maximum each line. Dielectric Withstanding Voltage: 2000Vac between each winding for 1 minute..

CTHF2826 Datasheet (164.83 KB)

Preview of CTHF2826 PDF

Datasheet Details

Part number:

CTHF2826

Manufacturer:

Central Technologies

File Size:

164.83 KB

Description:

Common chokes.
Common Mode Chokes - Radial ctparts.com CTHF2826 Series From 1.8 mH to 35 mH Not shown at actual size. SPECIFICATIONS
* Indicates the inductan.

📁 Related Datasheet

CTHF2836 - Common Chokes (Central Technologies)
Common Mode Chokes - Radial ctparts. CTHF2836 Series From 1.8 mH to 35 mH Not shown at actual size. SPECIFICATIONS * Indicates the inductance d.

CTHF2836F - Common Chokes (Central Technologies)
Common Mode Chokes - Radial ctparts. CTHF2836F Series From 1.8 mH to 35 mH RoHS Compliant Not shown at actual size. SPECIFICATIONS * Indicate.

CTHF2422 - Common Chokes (Central Technologies)
Common Mode Chokes - Radial ctparts. CTHF2422 Series From 2.4 mH to 68 mH Not shown at actual size. SPECIFICATIONS * Indicates the inductance d.

CTHF2430 - Common Chokes (Central Technologies)
Common Mode Chokes - Raidal ctparts. CTHF2430 Series From 2.4 mH to 68 mH Not shown at actual size. SPECIFICATIONS * Indicates the inductance d.

CTHFW2918F - SMD High Current Power Inductor (Central Technologies)
SMD High Current Power Inductor - Shielded .ctparts. CTHFW2918F Series From 3.3µH to 33µH SPECIFICATIONS *Isat: DC current (A) that will cause.

CTH10003NS-T52 - N-Channel MOSFET (CT Micro)
CTH10003NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30V  Drain-Source On-Resistance RDS(ON) 2.6m, at VGS= 10.

CTH11055NS - N-Channel MOSFET (CT Micro)
CTH11055NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 55V  Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= .

CTH1606NS-T52 - N-Channel MOSFET (CT Micro)
CTH1606NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain-Source On-Resistance RDS(ON) 52m, at VGS= 10V,.

TAGS

CTHF2826 Common Chokes Central Technologies

CTHF2826 Distributor