CTH1706PS-T52 P-Channel MOSFET

CT Micro

Description

CTH1706PS-T52 P-Channel Enhancement MOSFET .
The CTH1706PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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CTH1706PS-T52 Datasheet Preview — Preview of CTH1706PS-T52 PDF

Datasheet Specifications

Part number: CTH1706PS-T52
Manufacturer: CT Micro
File Size: 1.04 MB
Datasheet: CTH1706PS-T52-CTMicro.pdf
Description: P-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS-60V
* Drain-Source On-Resistance RDS(ON) 65m, at VGS= -10V, ID= -20A RDS(ON) 80m, at VGS= -4.5V, ID= -16A
* Continuous Drain Current at TC=25℃ID =-17A
* Advanced high cell density Trench Technology
* RoHS Compliance & Halogen Free Descript

Applications

* Switching Applications
* DC/DC Converter
* IPC Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTH1706PS-T52 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-S

CTH1706PS-T52 Distributors

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CTH1706PS-T52 P-Channel MOSFET CT Micro

CT Micro CTH1706PS-T52-like datasheet