CTH1706PS-T52 - P-Channel MOSFET

CT Micro

CTH1706PS-T52 Datasheet Preview — Preview of CTH1706PS-T52 PDF

Datasheet Details

Part number	CTH1706PS-T52
Manufacturer	CT Micro
File Size	1.04 MB
Description	P-Channel MOSFET
Datasheet	CTH1706PS-T52-CTMicro.pdf

CTH1706PS-T52 Product details

Description

The CTH1706PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Switching Applications DC/DC Converter IPC Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTH1706PS-T52 P-Channel Enhancement MOSFET Absolute Maximum

Features

Drain-Source Breakdown Voltage VDSS-60V.
Drain-Source On-Resistance RDS(ON) 65m, at VGS= -10V, ID= -20A RDS(ON) 80m, at VGS= -4.5V, ID= -16A.
Continuous Drain Current at TC=25℃ID =-17A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |