Description
CTH1804PS-T52 P-Channel Enhancement MOSFET .
The CTH1804PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Features
* Drain-Source Breakdown Voltage VDSS-40V
* Drain-Source On-Resistance
RDS(ON) 35m, at VGS= -10V, ID= -12A RDS(ON) 57m, at VGS= -4.5V, ID= -6A
* Continuous Drain Current at TC=25℃ID =-18.6A
* Advanced high cell density Trench Technology
* RoHS Compliance & Halogen Free
Descrip
Applications
* Load Switch
* DC/DC Converter
* LCD Display inverter
Package Outline
Schematic
Drain
Gate
Source
Drain Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 3 Jun, 2015
CTH1804PS-T52 P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS D
