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CTH10003NS-T52

N-Channel MOSFET

CTH10003NS-T52 Features

* Drain-Source Breakdown Voltage VDSS 30V

* Drain-Source On-Resistance RDS(ON) 2.6m, at VGS= 10V, ID= 20A RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A

* Continuous Drain Current at TC=25℃ID =100A

* Advanced high cell density Trench Technology

* RoHS Compliance & Halogen Free Descriptio

CTH10003NS-T52 General Description

The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance Applications
* DC/DC converters
* Motor Drivers
* Power .

CTH10003NS-T52 Datasheet (1.00 MB)

Preview of CTH10003NS-T52 PDF

Datasheet Details

Part number:

CTH10003NS-T52

Manufacturer:

CT Micro

File Size:

1.00 MB

Description:

N-channel mosfet.

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TAGS

CTH10003NS-T52 N-Channel MOSFET CT Micro

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