CTH10003NS-T52 N-Channel MOSFET

CT Micro

Description

CTH10003NS-T52 N-Channel Enhancement MOSFET .
The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

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CTH10003NS-T52 Datasheet Preview — Preview of CTH10003NS-T52 PDF

Datasheet Specifications

Part number: CTH10003NS-T52
Manufacturer: CT Micro
File Size: 1.00 MB
Datasheet: CTH10003NS-T52-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 30V
* Drain-Source On-Resistance RDS(ON) 2.6m, at VGS= 10V, ID= 20A RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A
* Continuous Drain Current at TC=25℃ID =100A
* Advanced high cell density Trench Technology
* RoHS Compliance & Halogen Free Descriptio

Applications

* DC/DC converters
* Motor Drivers
* Power Management Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTH10003NS-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS D

CTH10003NS-T52 Distributors

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CTH10003NS-T52 N-Channel MOSFET CT Micro

CT Micro CTH10003NS-T52-like datasheet