CTH11055NS N-Channel MOSFET

CT Micro

Description

CTH11055NS N-Channel Enhancement MOSFET .
These Power MOSFETs utilizes Advanced Trench Process Technology which comes with High Density Cell Design for Ultra Low RDS(ON).

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Datasheet Specifications

Part number: CTH11055NS
Manufacturer: CT Micro
File Size: 0.99 MB
Datasheet: CTH11055NS-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 55V
* Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= 59A
* Continuous Drain Current at TC=25℃ID =110A
* Advanced high cell density Trench Technology

Applications

* Switching Applications
* Motor Drivers
* Relay Drivers Package Outline Schematic Pin 1 CT Micro Proprietary & Confidential Gate: Drain: Source: Pin 1 Pin 2 Pin 3 Page 1 Rev 1 Aug, 2013 CTH11055NS N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters

CTH11055NS Distributors

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📌 All Tags

CTH11055NS N-Channel MOSFET CT Micro

CT Micro CTH11055NS-like datasheet