CTHFW2918F Datasheet (346.76 KB)
CTHFW2918F
Central Technologies
346.76 KB
Smd high current power inductor.
SMD High Current Power Inductor - Shielded www.ctparts.com
CTHFW2918F Series
From 3.3µH to 33µH
SPECIFICATIONS
*Isat: DC current (A) that will c.
📁 Related Datasheet
CTHF2422 - Common Chokes
(Central Technologies)
Common Mode Chokes - Radial
ctparts.
CTHF2422 Series
From 2.4 mH to 68 mH
Not shown at actual size.
SPECIFICATIONS
* Indicates the inductance d.
CTHF2430 - Common Chokes
(Central Technologies)
Common Mode Chokes - Raidal
ctparts.
CTHF2430 Series
From 2.4 mH to 68 mH
Not shown at actual size.
SPECIFICATIONS
* Indicates the inductance d.
CTHF2826 - Common Chokes
(Central Technologies)
Common Mode Chokes - Radial
ctparts.
CTHF2826 Series
From 1.8 mH to 35 mH
Not shown at actual size.
SPECIFICATIONS
* Indicates the inductance d.
CTHF2836 - Common Chokes
(Central Technologies)
Common Mode Chokes - Radial
ctparts.
CTHF2836 Series
From 1.8 mH to 35 mH
Not shown at actual size.
SPECIFICATIONS
* Indicates the inductance d.
CTHF2836F - Common Chokes
(Central Technologies)
Common Mode Chokes - Radial
ctparts.
CTHF2836F Series
From 1.8 mH to 35 mH
RoHS
Compliant
Not shown at actual size.
SPECIFICATIONS
* Indicate.
CTH10003NS-T52 - N-Channel MOSFET
(CT Micro)
CTH10003NS-T52 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30V Drain-Source On-Resistance
RDS(ON) 2.6m, at VGS= 10.
CTH11055NS - N-Channel MOSFET
(CT Micro)
CTH11055NS N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 55V Drain-Source On-Resistance
RDS(ON) 8m, at VGS= 10, ID= .
CTH1606NS-T52 - N-Channel MOSFET
(CT Micro)
CTH1606NS-T52 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 60V Drain-Source On-Resistance
RDS(ON) 52m, at VGS= 10V,.
