CTL0322PS-R3 Datasheet - CT Micro

CTL0322PS-R3 P-Channel MOSFET

The CTL0322PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications * Power Management * Lithium Ion Batte.

CTL0322PS-R3 Features

* Drain-Source Breakdown Voltage VDSS -20 V

* Drain-Source On-Resistance RDS(ON) 55mΩ, at VGS= -4.5V, ID= -3.2A RDS(ON) 70mΩ, at VGS= -2.5V, ID= -2.4A RDS(ON) 100mΩ, at VGS= -1.8V, ID= -1.7A ℃

* Continuous Drain Current at TA=25 ID = -3.2A

* Advanced high cell density

CTL0322PS-R3-CTMicro.pdf