Description
CTL0322PS-R3 P-Channel Enhancement MOSFET .
The CTL0322PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Features
* Drain-Source Breakdown Voltage VDSS -20 V
* Drain-Source On-Resistance
RDS(ON) 55mΩ, at VGS= -4.5V, ID= -3.2A RDS(ON) 70mΩ, at VGS= -2.5V, ID= -2.4A RDS(ON) 100mΩ, at VGS= -1.8V, ID= -1.7A
℃
* Continuous Drain Current at TA=25 ID = -3.2A
* Advanced high cell density
Applications
* Power Management
* Lithium Ion Battery
* High-Side Switching
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 3 Jun, 2015
CTL0322PS-R3 P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symb