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CTL0383NS-R3 - N-Channel MOSFET

CT Micro

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Datasheet Details

Part number	CTL0383NS-R3
Manufacturer	CT Micro
File Size	1.06 MB
Description	N-Channel MOSFET
Datasheet	CTL0383NS-R3-CTMicro.pdf

CTL0383NS-R3 Product details

Description

The CTL0383NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

Drain-Source Breakdown Voltage VDSS 30 V.
Drain-Source On-Resistance RDS(ON) 48m, at VGS= 10V, ID= 3.4A RDS(ON) 54m, at VGS= 4.5V, ID= 2.7A RDS(ON) 75m, at VGS= 2.5V, ID= 1.0A.
Continuous Drain Current at TC=25℃ID = 3.8A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |