CTL0383NS-R3 Datasheet - CT Micro

CTL0383NS-R3 N-Channel MOSFET

The CTL0383NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application su.

CTL0383NS-R3 Features

* Drain-Source Breakdown Voltage VDSS 30 V

* Drain-Source On-Resistance RDS(ON) 48m, at VGS= 10V, ID= 3.4A RDS(ON) 54m, at VGS= 4.5V, ID= 2.7A RDS(ON) 75m, at VGS= 2.5V, ID= 1.0A

* Continuous Drain Current at TC=25℃ID = 3.8A

* Advanced high cell density Trench Technology

* RoH

CTL0383NS-R3-CTMicro.pdf