Description
CTL0383NS-R3 N-Channel Enhancement MOSFET .
The CTL0383NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Features
* Drain-Source Breakdown Voltage VDSS 30 V
* Drain-Source On-Resistance
RDS(ON) 48m, at VGS= 10V, ID= 3.4A RDS(ON) 54m, at VGS= 4.5V, ID= 2.7A RDS(ON) 75m, at VGS= 2.5V, ID= 1.0A
* Continuous Drain Current at TC=25℃ID = 3.8A
* Advanced high cell density Trench Technology
* RoH
Applications
* Power Management
* Lithium Ion Battery
Package Outline
Schematic
Drain
Gate
Source
Drain Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 1 Nov, 2013
CTL0383NS-R3 N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
