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CTD6006-T52 - N-Channel MOSFET

CTD6006-T52 Description

CTD6006-T52 N-Channel Enhancement MOSFET .
The CTD6006-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

CTD6006-T52 Features

* Drain-Source Breakdown Voltage VDSS 60V
* Drain-Source On-Resistance RDS(ON) 20mī—, at VGS= 10V, ID= 20A RDS(ON) 24mī—, at VGS= 4.5V, ID= 10A
* Continuous Drain Current at TC=25℃, ID =35A
* Advanced high cell density Trench Technology

CTD6006-T52 Applications

* Super Low Gate Charge
* 100% EAS Guaranteed
* Green Device Available
* Excellent CdV/dt effect decline Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jan, 2018 CTD6006-T52 N-Channel Enhancement MOSFET Absolu

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Datasheet Details

Part number
CTD6006-T52
Manufacturer
CT Micro
File Size
2.01 MB
Datasheet
CTD6006-T52-CTMicro.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CT Micro
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