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3429DE - Dual P-Channel MOSFET

3429DE Description

Dual P-channelEnhancementMode MOSFET .
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

3429DE Features

* VDS
* ID
* RDS(ON)( at VGS=-4.5V)
* RDS(ON)( at VGS=-2.5V)
* RDS(ON)( at VGS=-1.8V) -20V -30A ＜19 mohm ＜26 mohm ＜45 mohm
* Trench Power LV MOSFET technology
* High density cell design for Low RDS(ON)

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Datasheet Details

Part number
3429DE
Manufacturer
CXW
File Size
1.52 MB
Datasheet
3429DE-CXW.pdf
Description
Dual P-Channel MOSFET

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Dual P-Channel MOSFET CXW
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3429DE Stock/Price