BSS123N3 Datasheet, Mosfet, CYStech Electronics

BSS123N3 Features

  • Mosfet
  • Low on-resistance
  • High speed switching
  • Low-voltage drive(2.5V)
  • Easily designed drive circuits
  • Pb-free lead plating and halogen-free pac

PDF File Details

Part number:

BSS123N3

Manufacturer:

CYStech Electronics

File Size:

449.56kb

Download:

📄 Datasheet

Description:

N-channel mosfet. RDSON(TYP) VGS=4V, ID=400mA VGS=10V, ID=170mA VGS=4V, ID=170mA The BSS123N3 is a N-channel enhancement-mode MOSFET. Features

Datasheet Preview: BSS123N3 📥 Download PDF (449.56kb)
Page 2 of BSS123N3 Page 3 of BSS123N3

BSS123N3 Application

  • Applications or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or applicat

TAGS

BSS123N3
N-CHANNEL
MOSFET
CYStech Electronics

📁 Related Datasheet

BSS123N - Small-Signal-Transistor (Infineon Technologies)
OptiMOS™ Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q10.

BSS123 - N-Channel MOSFET (JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET V(BR)DSS 100 V RDS(on)MAX 6Ω@10V 10Ω@.

BSS123 - N-channel transistor Logic level FET (NXP)
Philips Semiconductors N-channel TrenchMOS transistor Logic level FET Product specification BSS123 FEATURES • ’Trench’ technology • Extremely fast .

BSS123 - N-Channel Enhancement Mode Field Effect Transistor (Diodes Incorporated)
ADVANCE INFORMATION BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 0.

BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild Semiconductor)
BSS123 June 2003 BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field e.

BSS123 - SIPMOS Small Signal Transistor (Infineon Technologies AG)
Rev. 1.0 BSS123 SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS 100 6 0.17 .

BSS123 - N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD BSS123 Preliminary 170mA, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC BSS123 is an N-channel mode Power MOSFE.

BSS123 - 100V N-Channel Enhancement Mode MOSFE (PAN JIT)
PBSS123 100V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 100 V Current 170 mA SOT-23 Features  RDS(ON) , VGS@10V, ID@170mA<6Ω  RD.

BSS123 - N-Channel 100V MOSFET (LITE-ON)
N-Channel 100V MOSFET Features: Surface-mounted package Halogen free Application DC-DC Portable appliance Power management BSS123 BVDSS= 100V , ΩRDS(.

BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (ON Semiconductor)
N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123 General Description These N−Channel enhancement mode field effect transistors ar.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts