BSS123 Datasheet, transistor equivalent, Fairchild Semiconductor

BSS123 Features

• Transistor
• 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V RDS(ON) = 10Ω @ VGS = 4.5 V
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compa

PDF File Details

Part number:

BSS123

Manufacturer:

Fairchild Semiconductor

File Size:

168.34kb

Download:

📄 Datasheet

Description:

N-channel logic level enhancement mode field effect transistor. These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technol

BSS123 Application

• Applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features
• 0.17 A, 100 V. RDS(

TAGS

📁 Related Datasheet

BSS123 - N-Channel MOSFET (JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET V(BR)DSS 100 V RDS(on)MAX 6Ω@10V 10Ω@.

BSS123 - N-channel transistor Logic level FET (NXP)
Philips Semiconductors N-channel TrenchMOS transistor Logic level FET Product specification BSS123 FEATURES • ’Trench’ technology • Extremely fast .

BSS123 - N-Channel Enhancement Mode Field Effect Transistor (Diodes Incorporated)
ADVANCE INFORMATION BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 0.

BSS123 - SIPMOS Small Signal Transistor (Infineon Technologies AG)
Rev. 1.0 BSS123 SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS 100 6 0.17 .

BSS123 - N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD BSS123 Preliminary 170mA, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC BSS123 is an N-channel mode Power MOSFE.

BSS123 - 100V N-Channel Enhancement Mode MOSFE (PAN JIT)
PBSS123 100V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 100 V Current 170 mA SOT-23 Features  RDS(ON) , VGS@10V, ID@170mA<6Ω  RD.

BSS123 - N-Channel 100V MOSFET (LITE-ON)
N-Channel 100V MOSFET Features: Surface-mounted package Halogen free Application DC-DC Portable appliance Power management BSS123 BVDSS= 100V , ΩRDS(.

BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (ON Semiconductor)
N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123 General Description These N−Channel enhancement mode field effect transistors ar.

BSS123 - N-Channel ENHANCEMENT MODE MOSFET (Bruckewell)
BSS123 N-Channel ENHANCEMENT MODE MOSFET Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. Th.

BSS123 - SMD Power MOSFET Transistor (TAITRON)
SMD Power MOSFET Transistor (N-Channel) BSS123 SMD Power MOSFET Transistor (N-Channel) Features • Low On-Resistance:6Ω • Low input capacitance:20pF •.