BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor

Description

BSS123 June 2003 BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: BSS123
Manufacturer: Fairchild Semiconductor
File Size: 168.34 KB
Datasheet: BSS123_FairchildSemiconductor.pdf
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V RDS(ON) = 10Ω @ VGS = 4.5 V
* High density cell design for extremely low RDS(ON)
* Rugged and Reliable
* Compact industry standard SOT-23 surface mount package DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwi

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BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild Semiconductor

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