BSS123 Datasheet - Fairchild Semiconductor

BSS123, N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS123 June 2003 BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

Features

* 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V RDS(ON) = 10Ω @ VGS = 4.5 V
* High density cell design for extremely low RDS(ON)
* Rugged and Reliable
* Compact industry standard SOT-23 surface mount package DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwi

BSS123_FairchildSemiconductor.pdf