BSS123 Datasheet - Fairchild Semiconductor

BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly s.

BSS123 Features

* 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V RDS(ON) = 10Ω @ VGS = 4.5 V

* High density cell design for extremely low RDS(ON)

* Rugged and Reliable

* Compact industry standard SOT-23 surface mount package DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwi

BSS123_FairchildSemiconductor.pdf