BSS110

P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor

BSS110 Features

* BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ____________________________________________________________________________________

BSS110 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, wi.

BSS110 Datasheet (285.09 KB)

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Part number:

BSS110

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Fairchild Semiconductor

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285.09 KB

Description:

P-channel enhancement mode field effect transistor.

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BSS110 P-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor

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BSS110 Features

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