BSS110 P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor

Description

May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: BSS110
Manufacturer: Fairchild Semiconductor
File Size: 285.09 KB
Datasheet: BSS110_FairchildSemiconductor.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

Features

* BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ____________________________________________________________________________________

BSS110 Distributors

📁 Related Datasheet

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BSS110 P-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor

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