BSS110 Datasheet, Transistor, Fairchild Semiconductor

BSS110 Features

• Transistor BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(O

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Part number:

BSS110

Manufacturer:

Fairchild Semiconductor

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285.09kb

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📄 Datasheet

Description:

P-channel enhancement mode field effect transistor. These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS t

BSS110 Application

• Applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. This product is particularly suited to low voltage applications r

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BSS110

Fairchild Semiconductor

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