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BSS110 P-Channel Enhancement Mode Field Effect Transistor

BSS110 Description

May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

BSS110 Features

* BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ____________________________________________________________________________________

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Datasheet Details

Part number
BSS110
Manufacturer
Fairchild Semiconductor
File Size
285.09 KB
Datasheet
BSS110_FairchildSemiconductor.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

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P-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor
Fairchild Semiconductor BSS110-like datasheet