BSS123W Datasheet - Fairchild Semiconductor

BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor

This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applicat.

BSS123W Features

* 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V

* High Density Cell Design for Low RDS(ON)

* Rugged and Reliable

* Ultra Small Surface Mount Package

* Very Low Capacitance

* Fast Switching Speed

* Lead Free / RoHS Com

BSS123W Datasheet (215.35 KB)

BSS123W Datasheet Preview — Preview of BSS123W PDF

Datasheet Details

Part number:

BSS123W

Manufacturer:

Fairchild Semiconductor

File Size:

215.35 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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TAGS

BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild Semiconductor

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