BSS123W Datasheet (Fairchild Semiconductor) - N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS123W, N-Channel Logic Level Enhancement Mode Field Effect Transistor

This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology.

This product minimizes on-state resistance while providing rugged, reliable and fast switching performance.

This product is particularly suited for low-voltage, low-current applicat

BSS123W Features

* 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V

* High Density Cell Design for Low RDS(ON)

* Rugged and Reliable

* Ultra Small Surface Mount Package

* Very Low Capacitance

* Fast Switching Speed

* Lead Free / RoHS Com