BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor

Description

BSS123W * N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field .
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology.

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Datasheet Specifications

Part number: BSS123W
Manufacturer: Fairchild Semiconductor
File Size: 215.35 KB
Datasheet: BSS123W-FairchildSemiconductor.pdf
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V
* High Density Cell Design for Low RDS(ON)
* Rugged and Reliable
* Ultra Small Surface Mount Package
* Very Low Capacitance
* Fast Switching Speed
* Lead Free / RoHS Com

Applications

* such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications. D D S G SOT-323 GS Ordering Information Part Number BSS123W Marking SA Package SOT-323 3L Packing Method Tape and Reel Abso

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BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild Semiconductor

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