BSS123W Datasheet, Transistor, Fairchild Semiconductor

BSS123W Features

• Transistor
• 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V
• High Density Cell Design for Low RDS(ON)
• Rugged and Reliable
• Ultra Small

PDF File Details

Part number:

BSS123W

Manufacturer:

Fairchild Semiconductor

File Size:

215.35kb

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📄 Datasheet

Description:

N-channel logic level enhancement mode field effect transistor. This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product m

BSS123W Application

• Applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power s

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