* 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V
* High Density Cell Design for Low RDS(ON)
* Rugged and Reliable
* Ultra Small Surface Mount Package
* Very Low Capacitance
* Fast Switching Speed
* Lead Free / RoHS Com
BSS123W
Fairchild Semiconductor
215.35 KB
N-channel logic level enhancement mode field effect transistor.
BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field .
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