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BSS123WQ N-CHANNEL MOSFET

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Description

BSS123WQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170mA .
and Application This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for.

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Datasheet Specifications

Part number
BSS123WQ
Manufacturer
DIODES ↗
File Size
248.95 KB
Datasheet
BSS123WQ-Diodes.pdf
Description
N-CHANNEL MOSFET

Features

* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* High Drain-Source Voltage Rating
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note

Applications

* Small servo motor controls
* Power MOSFET gate drivers

BSS123WQ Distributors

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