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BSS138DWQ DUAL N-CHANNEL MOSFET

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Description

BSS138DWQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 200mA .
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency.

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Datasheet Specifications

Part number
BSS138DWQ
Manufacturer
DIODES ↗
File Size
578.77 KB
Datasheet
BSS138DWQ-Diodes.pdf
Description
DUAL N-CHANNEL MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* Applications

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Diodes BSS138DWQ-like datasheet