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BSS138 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Features

  • 0.22 A, 50V. RDS(ON) = 3.5Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). Rugged and Relaible Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage T A = 25°C unless otherwise noted BSS138 50 50 ± 20 ± 40 0.22 0.88 0.36 2.8 -55 to 150 300 Units V V V Drain-Gate Voltage (RGS < 20KΩ) Gate-Source Voltage - C.

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Datasheet Details

Part number BSS138
Manufacturer Fairchild Semiconductor
File Size 95.73 KB
Description N-Channel MOSFET
Datasheet download datasheet BSS138 Datasheet
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Full PDF Text Transcription

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May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features 0.22 A, 50V. RDS(ON) = 3.5Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). Rugged and Relaible Compact industry standard SOT-23 surface mount package.
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