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BSS138BKS MOSFET

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Description

BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev.1 * 12 August 2011 Product data sheet 1.Product profile 1.1 General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench.

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Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology
* ESD protection up to 1.5 kV

Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 320 mA; Tj = 25 °C [1] Quick refere

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BSS138BK BSS138BKW BSS138 BSS138-7-F BSS138-G BSS138-NL

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