BSS138BKW 320mA N-channel Trench MOSFET

NXP

Description

SO T3 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev.1 * 12 August 2011 Product data sheet 1.Product profile 1.1 General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET te.

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Datasheet Specifications

Part number: BSS138BKW
Manufacturer: NXP ↗
File Size: 875.69 KB
Datasheet: BSS138BKW-NXP.pdf
Description: 320mA N-channel Trench MOSFET

Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology
* ESD protection up to 1.5 kV

Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °

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BSS138BKW 320mA N-channel Trench MOSFET NXP

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