BSS110 Datasheet - NXP

BSS110 - P-channel enhancement mode vertical D-MOS transistor

P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.

handbook, halfpage BSS110 d 1 2 3 g MAM144 s Fig.1 Simplified outline and symbol.

PINNING - TO-92 variant PIN 1 2 3 SYMBOL s g d DESCRIPTION source gate drain CAUTION The device is supplied in an antistatic packag

BSS110 Features

* Low threshold voltage

* Direct interface to C-MOS, TTL, etc.

* High speed switching

* No secondary breakdown. APPLICATIONS

* Intended for use as a Line current interruptor in telephone sets and for applications in relay, high speed and line transformer drive

Datasheet Details

BSS110

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P-channel enhancement mode vertical d-mos transistor.

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