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BSS110 Datasheet - NXP

P-channel enhancement mode vertical D-MOS transistor

BSS110 Features

* Low threshold voltage

* Direct interface to C-MOS, TTL, etc.

* High speed switching

* No secondary breakdown. APPLICATIONS

* Intended for use as a Line current interruptor in telephone sets and for applications in relay, high speed and line transformer drive

BSS110 General Description

P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. handbook, halfpage BSS110 d 1 2 3 g MAM144 s Fig.1 Simplified outline and symbol. PINNING - TO-92 variant PIN 1 2 3 SYMBOL s g d DESCRIPTION source gate drain CAUTION The device is supplied in an antistatic packag.

BSS110 Datasheet (76.96 KB)

Preview of BSS110 PDF

Datasheet Details

Part number:

BSS110

Manufacturer:

NXP ↗

File Size:

76.96 KB

Description:

P-channel enhancement mode vertical d-mos transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product speciļ¬cation File under Discrete Semiconducto.

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BSS110 P-channel enhancement mode vertical D-MOS transistor NXP

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