BSS123BKN3 - N-Channel MOSFET

Datasheet Summary

Features

ESD protected gate.
High speed switching.
Pb-free lead plating and halogen-free package.
Easily designed drive circuits.
Low-voltage drive.
Easy to use in parallel Symbol BSS123BKN3 D G G：Gate S S：Source D：Drain Outline SOT-23 D S G Ordering Information Device BSS123BKN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G.

Cystech Electonics

📥 Download Datasheet

Datasheet Details

Part number	BSS123BKN3
Manufacturer	Cystech Electonics
File Size	554.61 KB
Description	N-Channel MOSFET
Datasheet	BSS123BKN3 Datasheet
Additional preview pages of the BSS123BKN3 datasheet.

📁 Similar Datasheet

BSS123 - N-Channel MOSFET (JCET)
BSS123 - N-channel transistor Logic level FET (NXP)
BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild Semiconductor)
BSS123 - SIPMOS Small Signal Transistor (Infineon Technologies AG)
BSS123 - N-CHANNEL POWER MOSFET (UTC)
BSS123 - 100V N-Channel Enhancement Mode MOSFE (PAN JIT)
BSS123 - N-Channel 100V MOSFET (LITE-ON)
BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (ON Semiconductor)
BSS123 - N-Channel ENHANCEMENT MODE MOSFET (Bruckewell)
BSS123 - SMD Power MOSFET Transistor (TAITRON)

Other Datasheets by Cystech Electonics

Full PDF Text Transcription

Click to expand full text

CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET BSS123BKN3 BVDSS ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=100mA RDS(ON)@VGS=4.5V, ID=100mA 100V 0.19A 2.8Ω(typ) 3.

Published: Feb 28, 2017 |