BSS123 Datasheet, transistor equivalent, Diodes Incorporated

BSS123 Features

  • Transistor
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • High Drain-Source Voltage Rating

PDF File Details

Part number:

BSS123

Manufacturer:

DIODES ↗ Incorporated

File Size:

530.32kb

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor. and Applications These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high

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BSS123 Application

  • Applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified fa

TAGS

BSS123
N-Channel
Enhancement
Mode
Field
Effect
Transistor
Diodes Incorporated

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