BSS123 Datasheet - Diodes Incorporated

N-Channel Enhancement Mode Field Effect Transistor

BSS123 Features

* Low Gate Threshold Voltage

* Low Input Capacitance

* Fast Switching Speed

* Low Input/Output Leakage

* High Drain-Source Voltage Rating

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony Free. “Green” Device (Note 3)

* For automotive app

BSS123 General Description

and Applications These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performa.

BSS123 Datasheet (530.32 KB)

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Datasheet Details

Part number:

BSS123

Manufacturer:

DIODES ↗ Incorporated

File Size:

530.32 KB

Description:

N-channel enhancement mode field effect transistor.
ADVANCE INFORMATION BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 0.

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BSS123 N-Channel Enhancement Mode Field Effect Transistor Diodes Incorporated

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BSS123 Features

BSS123 General Description

Datasheet Details

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Description:

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