* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* High Drain-Source Voltage Rating
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* For automotive app
BSS123
DIODES ↗ Incorporated
530.32 KB
N-channel enhancement mode field effect transistor.
ADVANCE INFORMATION
BSS123
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 100V
RDS(ON) 6.0Ω @ VGS = 10V
ID TA = +25°C
0.
📁 Related Datasheet
BSS123 N-Channel MOSFET (JCET)
BSS123 N-channel transistor Logic level FET (NXP)
BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild Semiconductor)
BSS123 SIPMOS Small Signal Transistor (Infineon Technologies AG)
BSS123 N-CHANNEL POWER MOSFET (UTC)
BSS123 100V N-Channel Enhancement Mode MOSFE (PAN JIT)
BSS123 N-Channel 100V MOSFET (LITE-ON)
BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor (ON Semiconductor)
BSS123 N-Channel ENHANCEMENT MODE MOSFET (Bruckewell)
BSS123 SMD Power MOSFET Transistor (TAITRON)
