BSS123 N-Channel Enhancement Mode Field Effect Transistor

Diodes Incorporated

Description

ADVANCE INFORMATION BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 0.
and Applications These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and adva.

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Datasheet Specifications

Part number: BSS123
Manufacturer: DIODES ↗ Incorporated
File Size: 530.32 KB
Datasheet: BSS123_DiodesIncorporated.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* High Drain-Source Voltage Rating
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* For automotive app

Applications

* requiring specific change control (i. e. : parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www. diodes. com/products/automotive/automotiveproducts/.

BSS123 Distributors

📁 Related Datasheet

BSS123A BSS123BKN3 BSS123KN3 BSS123LT1 BSS123LT1G BSS123N

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BSS123 N-Channel Enhancement Mode Field Effect Transistor Diodes Incorporated

Diodes Incorporated BSS123-like datasheet