Part number:
BSS123
Manufacturer:
DIODES ↗ Incorporated
File Size:
530.32 KB
Description:
N-channel enhancement mode field effect transistor.
Datasheet Details
Part number:
BSS123
Manufacturer:
DIODES ↗ Incorporated
File Size:
530.32 KB
Description:
N-channel enhancement mode field effect transistor.
BSS123, N-Channel Enhancement Mode Field Effect Transistor
and Applications These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology.
These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performa
BSS123 Features
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* High Drain-Source Voltage Rating
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* For automotive app
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