Datasheet4U Logo Datasheet4U.com

BSS123 - N-Channel Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Preview of BSS123 PDF
datasheet Preview Page 2 datasheet Preview Page 3

BSS123 Product details

Description

and Applications These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology.These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance.These products are particularly suited for low voltage, low current applications such as: Small Servo Motor Control Power MOSFET Gate Drivers Switching Applications SOT23 Mecha

Features

📁 BSS123 Similar Datasheet

  • BSS123A - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET (Zetex Semiconductors)
  • BSS123BKN3 - N-Channel MOSFET (Cystech Electonics)
  • BSS123KN3 - N-Channel Enhancement Mode MOSFET (CYStech)
  • BSS123LT1 - TMOS FET Transistor (Motorola Inc)
  • BSS123LT1G - N-Channel Power MOSFET (ON Semiconductor)
  • BSS123N - Small-Signal-Transistor (Infineon Technologies)
  • BSS123N3 - N-CHANNEL MOSFET (CYStech Electronics)
  • BSS123W - N-CHANNEL MOSFET (Diodes)
Other Datasheets by Diodes Incorporated
Published: |