BSS123 Datasheet (Diodes Incorporated) - N-Channel Enhancement Mode Field Effect Transistor

BSS123, N-Channel Enhancement Mode Field Effect Transistor

and Applications These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology.

These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performa

BSS123 Features

* Low Gate Threshold Voltage

* Low Input Capacitance

* Fast Switching Speed

* Low Input/Output Leakage

* High Drain-Source Voltage Rating

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony Free. “Green” Device (Note 3)

* For automotive app