BSS123LT1 - TMOS FET Transistor

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Features

217. 303.
675.
2140 or 1.
800.
441.
2447 JAPAN: Nippon Motorola Ltd. ; Tatsumi.
SPD.
JLDC, 6F Seibu.
Butsuryu.
Center, 3.
14.
2 Tatsumi Koto.
Ku, Tokyo 135, Japan. 81.
3.
3521.
8315 Mfax™: RMFAX0@email. sps. mot. com.

Motorola Inc

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Datasheet Details

Part number	BSS123LT1
Manufacturer	Motorola Inc
File Size	93.12 KB
Description	TMOS FET Transistor
Datasheet	BSS123LT1 Datasheet
Additional preview pages of the BSS123LT1 datasheet.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TMOS FET Transistor N–Channel 3 DRAIN 1 GATE 2 SOURCE BSS123LT1 Motorola Preferred Device ® MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Symbol VDSS VGS VGSM ID IDM 3 1 2 Value 100 ± 20 ± 40 0.17 0.68 Unit Vdc Vdc Vpk Adc CASE 318 – 08, STYLE 21 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(3) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.

Published: Mar 23, 2005 |