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BSS123LT1 TMOS FET Transistor

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TMOS FET Transistor N *Channel 3 DRAIN 1 GATE 2 SOURCE BSS123LT1 M.

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Datasheet Specifications

Part number
BSS123LT1
Manufacturer
Motorola Inc
File Size
93.12 KB
Datasheet
BSS123LT1_MotorolaInc.pdf
Description
TMOS FET Transistor

Features

* 217. 303
* 675
* 2140 or 1
* 800
* 441
* 2447 JAPAN: Nippon Motorola Ltd. ; Tatsumi
* SPD
* JLDC, 6F Seibu
* Butsuryu
* Center, 3
* 14
* 2 Tatsumi Koto
* Ku, Tokyo 135, Japan. 81
* 3
* 3521
* 8315 Mfax™: RMFAX0

Applications

* Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a

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