BSS138DW DUAL N-CHANNEL MOSFET

Diodes Incorporated

Description

BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 200mA D.
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it id.

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Datasheet Specifications

Part number: BSS138DW
Manufacturer: DIODES ↗ Incorporated
File Size: 569.24 KB
Datasheet: BSS138DW_DiodesIncorporated.pdf
Description: DUAL N-CHANNEL MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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📁 Related Datasheet

BSS138DWQ BSS138 BSS138-7-F BSS138-G BSS138-NL BSS138A

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BSS138DW DUAL N-CHANNEL MOSFET Diodes Incorporated

Diodes Incorporated BSS138DW-like datasheet