BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Diodes Incorporated

Description

BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS -50V RDS(ON) 10Ω @ VGS = -5V ID TA = +25°C -130mA .
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it id.

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Datasheet Specifications

Part number: BSS84W
Manufacturer: DIODES ↗ Incorporated
File Size: 548.28 KB
Datasheet: BSS84W_DiodesIncorporated.pdf
Description: P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* General Purpose Interfacing Switch
* Power Management Functions
* Analog Switch SOT323 (Standard)

BSS84W Distributors

📁 Related Datasheet

BSS84W-G BSS84WQ BSS84 BSS84-HF BSS8402D BSS8402DW

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BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Diodes Incorporated

Diodes Incorporated BSS84W-like datasheet