BSS100 Datasheet - Fairchild Semiconductor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS100 Features

* BSS100: 0.22A, 100V. RDS(ON) = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. _______________________________________________________________________________ D G BSS100

BSS100 General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. This produc.

BSS100 Datasheet (284.54 KB)

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Datasheet Details

Part number:

BSS100

Manufacturer:

Fairchild Semiconductor

File Size:

284.54 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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BSS100 N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild Semiconductor

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BSS100 Features

BSS100 General Description

Datasheet Details

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Description:

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