BSS100 N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor

Description

September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number: BSS100
Manufacturer: Fairchild Semiconductor
File Size: 284.54 KB
Datasheet: BSS100_FairchildSemiconductor.pdf
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* BSS100: 0.22A, 100V. RDS(ON) = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. _______________________________________________________________________________ D G BSS100

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📁 Related Datasheet

BSS101 BSS119 BSS119N BSS123 BSS123A BSS123BKN3

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BSS100 N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild Semiconductor

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