MTP1406L3 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics

Description

CYStech Electronics Corp.P-Channel Enhancement Mode Power MOSFET Spec.No.: C733L3 Issued Date : 2012.02.14 Revised Date : 2012.03.09 Page No.: 1/.

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Datasheet Specifications

Part number: MTP1406L3
Manufacturer: CYStech Electronics
File Size: 329.26 KB
Datasheet: MTP1406L3-CYStechElectronics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Simple Drive Requirement
* Low On-resistance
* Fast switching Characteristic
* Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A RDSON@VGS=-4.5V, ID=-2A -60V -4.8A 75mΩ (typ. ) 74mΩ (typ. ) 99mΩ (typ. ) Symbol MTP1406L3 Outline S

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP1406L3 CYStek Product Specification

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MTP1406L3 P-Channel Enhancement Mode Power MOSFET CYStech Electronics

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